科研论文
[1] Hu,LJ(Hu,Lianjun)1,2;Zhang,XB(Zhang,Xinbo)1,2;Wang,H(Wang,Hao)1,2;Zhang,JL(Zhang,Jiangliang)1,2;Xia,RY(Xia,Rongyang)1,2;Cao,JW(Cao,Jingwei)1,2;Pan,GF(Pan,Guofeng)1,2. Experimental and density functional theory study of complexing agents on cobalt dissolution in alkaline solutions. ELECTROCHIMICA ACTA, 2021, 375 , 137977.
[2] Zhu Mengya1,2;He Ping3;Yang Xueli1;Hui Guangze1;Tang Chengchun4;Pan Guofeng1;Bie Lijian2. DFT calculation on p-xylene sensing mechanism of (C_4H_9NH_3)_2PbI_4 single crystal based on physisorption. Rare Metals, 2021, 40 6, 1571-1577.
[3] Hui,GZ(Hui,Guangze)1;Zhu,MY(Zhu,Mengya)1;Yang,XL(Yang,Xueli)1;Liu,JJ(Liu,Jianjun)2;Pan,GF(Pan,Guofeng)1;Wang,ZY(Wang,Ziyan)1. Highly sensitive ethanol gas sensor based on CeO2/ZnO binary heterojunction composite. MATERIALS LETTERS, 2020, 278 , .
[4] Cui,JR(Cui,Junrui)1;Pan,GF(Pan,Guofeng)1;Yang,XL(Yang,Xueli)1;Zhu,MY(Zhu,Mengya)1;Huang,C(Huang,Chao)1;Qi,JC(Qi,Jiacheng)1. Enhanced acetone sensing performance of CeO2-ZnO at low temperature and its photo-excitation effect. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 118 , .
[5] 李灿1,2;潘国峰1,2;胡连军1,2;王辰伟1,2;刘佳1,2;张鑫博1,2;回广泽1,2. 碱性抛光液中铜和钽CMP的去除速率控制和电偶腐蚀研究. 电镀与涂饰, 2020, 39 23, 1659-1666.
[6] 崔军蕊;潘国峰;杨学莉;朱梦雅;黄超;齐嘉城. 基于CeO_2掺杂ZnO的高灵敏度丙酮气体传感器. 电子元件与材料, 2020, 39 8, 45-53.
[7] 黄超，潘国峰，王辰伟，齐嘉城，崔军蕊. 碱性抛光液中抑制剂TT-LYK对Cu/Co电偶腐蚀的影响. 半导体技术, 2020, 45 3, 206-212，235.
[8] 齐嘉城1,2;，王辰伟1,2;，潘国峰1,2;，黄超1,2;，崔军蕊1,2;. BIT作为缓蚀剂在铜互连阻挡层CMP的应用. 半导体技术, 2020, 45 4, 298-303.
[9] Zhang,XB(Zhang,Xinbo)1,2;Pan,GF(Pan,Guofeng)1,2;Hu,LJ(Hu,Lianjun)1,2;Wang,H(Wang,Hao)1,2;Wang,CW(Wang,Chenwei)1,2. Effects of nitrilotriacetic acid and corrosion inhibitor on cobalt barrier chemical-mechanical polishing: Experimental and density functional theory analysis. COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS, 2020, 605 , .
[10] Hu,LJ(Hu,Lianjun)1,2;Pan,GF(Pan,Guofeng)1,2;Li,C(Li,Can)1,2;Zhang,XB(Zhang,Xinbo)1,2;Liu,J(Liu,Jia)1,2;He,P(He,Ping)3;Wang,CW(Wang,Chenwei)1,2. Potassium tartrate as a complexing agent for chemical mechanical polishing of Cu/Co/TaN barrier liner stack in H2O2 based alkaline slurries. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 108 , .