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[2] Zeng, Nengyuan;Wang, Chenwei;Luo, Chong;Zhao, Hongdong;Liu, Yunling;Wang, Wantang;Ma, Tengda. An optimized passivation mechanism at the copper film recess for achieving efficient planarization of copper chemical mechanical polishing. Materials Science in Semiconductor Processing, 2022, 139 , .

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[4] Zeng, Nengyuan;Wang, Chenwei;Luo, Chong;Zhao, Hongdong;Liu, Yuling;Wang, Wantang;Ma, Tengda. An optimized passivation mechanism at the copper film recess for achieving efficient planarization of copper chemical mechanical polishing. Materials Science in Semiconductor Processing, 2022, 139 , .

[5] Zeng, Nengyuan¹; Zhao, Hongdong¹; Liu, Yuling¹; Wang, Chenwei¹; Luo, Chong¹; Wang, Wantang¹; Ma, Tengda¹ . Methods and Mechanistic Analysis of Improving the Dispersion of Nano Silica Colloidal Particles in Chemical Mechanical Polishing Slurries. ResearchSquare, 2021, , .

[6] LIU, Yuling;WANG, Chenwei;LUO, Chong. USE OF GLSI POLYLAMINATE WIRING HIGH-VALENCE METAL IN CMP. , 2021, HEBEI UNIVERSITY OF TECHNOLOGY;TIANJIN JINGLING MICROELECTRONIC MATERIALS CO., LTD, WO2022022147(A1) 2022.02.03.

[7] LIU, Yuling;WANG, Chenwei;LUO, Chong. USE OF GLSI POLYLAMINATE WIRING HIGH-VALENCE METAL IN CMP. , 2021, HEBEI UNIVERSITY OF TECHNOLOGY;TIANJIN JINGLING MICROELECTRONIC MATERIALS CO., LTD, WO2022022147(A1) 2022.02.03.

[8] Zeng,NY(Zeng,Nengyuan)^1,2;Zhao,HD(Zhao,Hongdong)^1,2;Luo,C(Luo,Chong)^1,2;Liu,YL(Liu,Yuling)^1,2;Wang,CW(Wang,Chenwei)^1,2;Ma,TD(Ma,Tengda)^1,2;Wang,WT(Wang,Wantang)^1,2. Roles and mechanistic analysis of adenine as a green inhibitor in chemical mechanical polishing. JOURNAL OF APPLIED ELECTROCHEMISTRY, 2021, 51 10, 1479-1489.

[9] Zeng, Nengyuan^{1, 2}; Zhao, Hongdong^{1, 2, 3}; Liu, Yuling^{1, 2}; Wang, Chenwei^{1, 2}; Luo, Chong^{1, 2}; Wang, Wantang^{1, 2}; Ma, Tengda^{1, 2} . Optimizing of the Colloidal Dispersity of Silica Nanoparticle Slurries for Chemical Mechanical Polishing. Silicon, 2021, , .

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