[1] 程向荣. InSe纳米材料电子结构调控机理研究. , 2020, 陶俊光, .

[2] 于宸崎. 三元氧化物气液固反应法制备MoS₂薄膜及其性能研究. , 2020, 陶俊光, .

[3] 韩瑞祥，暢璞，陶俊光. 不同形貌磷化钴超级电容材料的制备与性能研究. 河北工业大学学报, 2020, 49 1, 18-25.

[4] Chang,P(Chang,Pu)¹;Zhang,S(Zhang,Shuo)¹;Guan,LX(Guan,Lixiu)²;Zhang,H(Zhang,Hui)¹;Chen,GF(Chen,Guifeng)¹;Tao,JG(Tao,Junguang)¹. Defect-mediated strong exciton-phonon coupling between flower-like WS2 film with vicinity layers. JOURNAL OF LUMINESCENCE, 2020, 226 , .

[5] Chen,HJ(Chen,Hongjian)¹;Wang,X(Wang,Xue)¹;Guan,LX(Guan,Lixiu)²;Chen,L(Chen,Lei)¹;Tao,JG(Tao,Junguang)¹. Surface engineering of layered SnO micro-plates for impressive high supercapacitor performance. MATERIALS CHEMISTRY AND PHYSICS, 2019, 238 , .

[6] Cheng,XR(Cheng,Xiangrong)¹;Guan,LX(Guan,Lixiu)²;Tao,JG(Tao,Junguang)¹. Prediction of directional magnetic-exchange coupling in Mn doped gamma-InSe monolayer. RESULTS IN PHYSICS, 2019, 14 , .

[7] Tao,JG(Tao,Junguang)¹;Li,B(Li,Bing)². Visible Light-Responsive Photocatalysts for Energy Production. FRONTIERS IN CHEMISTRY, 2019, 7 , .

[8] Cheng,XR(Cheng,Xiangrong)¹;Zhang,CC(Zhang,Changcheng)²;Guan,LX(Guan,Lixiu)²;Tao,JG(Tao,Junguang)^1,3. Origin of Intrinsic Direct Band Gap of Janus Group-III Chalcogenide Monolayers. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 10, .

[9] Cheng,XR(Cheng,Xiangrong)¹;Zhang,CC(Zhang,Changcheng)²;Guan,LX(Guan,Lixiu)²;Tao,JG(Tao,Junguang)¹. Origin of high hydrogen evolution activity on InSe nanoribbons: A first-principles study. INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2019, 44 44, 24174-24183.

[10] Chen,L(Chen,Lei)¹;Guan,LX(Guan,Lixiu)²;Tao,JG(Tao,Junguang)¹. Morphology control of Ni3S2 multiple structures and their effect on supercapacitor performances. JOURNAL OF MATERIALS SCIENCE, 2019, 54 19, 12737-12746.